Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
- RS Stock No.:
- 812-3117
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
£12.80
(exc. VAT)
£15.35
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 150 unit(s) ready to ship
- Plus 400 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | £0.256 | £12.80 |
| 500 - 1200 | £0.179 | £8.95 |
| 1250 - 2450 | £0.141 | £7.05 |
| 2500 - 4950 | £0.128 | £6.40 |
| 5000 + | £0.115 | £5.75 |
*price indicative
- RS Stock No.:
- 812-3117
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | Si2304DDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series Si2304DDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3
- DiodesZetex DMG3406L N channel-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMG3406L-13
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23