Vishay P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 SI2365EDS-T1-GE3

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Subtotal (1 pack of 50 units)*

£9.20

(exc. VAT)

£11.05

(inc. VAT)

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Being discontinued
  • Final 57,800 unit(s), ready to ship
Units
Per unit
Per Pack*
50 - 450£0.184£9.20
500 - 1200£0.129£6.45
1250 - 2450£0.101£5.05
2500 - 4950£0.092£4.60
5000 +£0.074£3.70

*price indicative

Packaging Options:
RS Stock No.:
812-3139
Mfr. Part No.:
SI2365EDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

67.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

23.8 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-50 °C

Height

1.02mm

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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