Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3

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Subtotal (1 pack of 50 units)*

£9.20

(exc. VAT)

£11.05

(inc. VAT)

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Being discontinued
  • Final 56,500 unit(s), ready to ship
Units
Per unit
Per Pack*
50 - 450£0.184£9.20
500 - 1200£0.129£6.45
1250 - 2450£0.101£5.05
2500 - 4950£0.092£4.60
5000 +£0.074£3.70

*price indicative

Packaging Options:
RS Stock No.:
812-3139
Mfr. Part No.:
SI2365EDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

5.9A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.0675Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13.8nC

Minimum Operating Temperature

-50°C

Forward Voltage Vf

-0.8V

Maximum Power Dissipation Pd

1.7W

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Height

1.02mm

Width

1.4 mm

Standards/Approvals

RoHS

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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