Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3

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Subtotal (1 pack of 20 units)*

£15.06

(exc. VAT)

£18.08

(inc. VAT)

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Being discontinued
  • Plus 40 unit(s) shipping from 19 January 2026
  • Plus 60 unit(s) shipping from 22 January 2026
  • Final 15,600 unit(s) shipping from 26 January 2026
Units
Per unit
Per Pack*
20 +£0.753£15.06

*price indicative

Packaging Options:
RS Stock No.:
812-3123
Mfr. Part No.:
SI2337DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

80V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.303Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-50°C

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

IEC 61249-2-21

Width

1.4 mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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