Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

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Subtotal (1 pack of 20 units)*

£7.34

(exc. VAT)

£8.80

(inc. VAT)

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Being discontinued
  • Final 7,740 unit(s), ready to ship
Units
Per unit
Per Pack*
20 - 180£0.367£7.34
200 - 480£0.283£5.66
500 - 980£0.264£5.28
1000 - 1980£0.239£4.78
2000 +£0.221£4.42

*price indicative

Packaging Options:
RS Stock No.:
812-3126
Mfr. Part No.:
Si2338DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

Si2338DS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Length

3.04mm

Width

1.4 mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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