onsemi PowerTrench N-Channel MOSFET, 18.5 A, 30 V, 8-Pin SOIC FDS8813NZ
- RS Stock No.:
- 806-3668
- Mfr. Part No.:
- FDS8813NZ
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£5.87
(exc. VAT)
£7.045
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,185 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £1.174 | £5.87 |
*price indicative
- RS Stock No.:
- 806-3668
- Mfr. Part No.:
- FDS8813NZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 18.5 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 6.6 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 28 nC @ 5 V, 55 nC @ 10 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Width | 3.9mm | |
Length | 4.9mm | |
Maximum Operating Temperature | +150 °C | |
Height | 1.575mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 18.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.6 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 28 nC @ 5 V, 55 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 3.9mm | ||
Length 4.9mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.575mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8813NZ
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6680A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6690A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8878
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6670A
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8884
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS8880
- onsemi PowerTrench N-Channel MOSFET 30 V, 8-Pin SOIC FDS6692A