onsemi PowerTrench Type N-Channel MOSFET, 18.5 A, 30 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 166-2869
- Mfr. Part No.:
- FDS8813NZ
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 166-2869
- Mfr. Part No.:
- FDS8813NZ
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.9 mm | |
| Length | 4.9mm | |
| Height | 1.575mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 3.9 mm | ||
Length 4.9mm | ||
Height 1.575mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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