IXYS Single HiperFET, Q3-Class 1 Type N, Type N-Channel MOSFET, 15 A, 1000 V Enhancement, 3-Pin TO-247 IXFH15N100Q3
- RS Stock No.:
- 801-1389
- Distrelec Article No.:
- 302-53-309
- Mfr. Part No.:
- IXFH15N100Q3
- Brand:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 801-1389
- Distrelec Article No.:
- 302-53-309
- Mfr. Part No.:
- IXFH15N100Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Package Type | TO-247 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.05Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 690W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 16.26mm | |
| Width | 5.3mm | |
| Length | 16.26mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Package Type TO-247 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.05Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 690W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 16.26mm | ||
Width 5.3mm | ||
Length 16.26mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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