STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STB18N60M2
- RS Stock No.:
- 792-5707
- Mfr. Part No.:
- STB18N60M2
- Brand:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
£7.12
(exc. VAT)
£8.545
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,745 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.424 | £7.12 |
*price indicative
- RS Stock No.:
- 792-5707
- Mfr. Part No.:
- STB18N60M2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | MDmesh M2 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 21.5 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 9.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh M2 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 21.5 nC @ 10 V | ||
Transistor Material Si | ||
Width 9.35mm | ||
Maximum Operating Temperature +150 °C | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
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