N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2

RS Stock No.:: 165-6550
Mfr. Part No.:: STB18N60M2
Brand:: STMicroelectronics

N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2

999999999 In stock - FREE next working day delivery available

Price Each (On a Reel of 1000)

£1.07

(exc. VAT)

£1.28

(inc. VAT)

Units	Per unit	Per Reel*
1000 +	£1.07	£1,070.00

*price indicative

RS Stock No.:: 165-6550
Mfr. Part No.:: STB18N60M2
Brand:: STMicroelectronics

Technical Reference

STB18N60M2, STP18N60M2, STW18N60M2, N-Channel 600V, 0.255 Ohm typ., 13A MDmesh II Plus Low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Data Sheet
ESD Control Selection Guide V1

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	13 A
Maximum Drain Source Voltage	650 V
Package Type	D2PAK (TO-263)
Series	MDmesh M2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Width	9.35mm
Length	10.4mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	21.5 nC @ 10 V
Height	4.6mm
Minimum Operating Temperature	-55 °C