STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin DPAK STD6N60M2
- RS Stock No.:
- 786-3615
- Mfr. Part No.:
- STD6N60M2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.40
(exc. VAT)
£8.90
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.48 | £7.40 |
| 25 - 45 | £1.406 | £7.03 |
| 50 - 120 | £1.266 | £6.33 |
| 125 - 245 | £1.14 | £5.70 |
| 250 + | £1.082 | £5.41 |
*price indicative
- RS Stock No.:
- 786-3615
- Mfr. Part No.:
- STD6N60M2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | DPAK (TO-252) | |
| Series | MDmesh M2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 60 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| Transistor Material | Si | |
| Height | 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DPAK (TO-252) | ||
Series MDmesh M2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 60 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.6mm | ||
Width 6.2mm | ||
Transistor Material Si | ||
Height 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin DPAK STD6N60M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin DPAK STD9N60M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin DPAK STD13N65M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 600 V, 3-Pin DPAK STD16N60M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP7N60M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP18N65M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP5N60M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP10N60M2