Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 SIRA06DP-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 5 units)*

£4.04

(exc. VAT)

£4.85

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
5 - 45£0.808£4.04
50 - 245£0.686£3.43
250 - 495£0.566£2.83
500 - 1245£0.532£2.66
1250 +£0.50£2.50

*price indicative

Packaging Options:
RS Stock No.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Transistor Material

Si

Width

5.26mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Length

6.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.12mm

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

Related links