Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 tape of 5 units)*

£7.00

(exc. VAT)

£8.40

(inc. VAT)

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Temporarily out of stock
  • Shipping from 28 June 2027
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Units
Per unit
Per Tape*
5 - 45£1.40£7.00
50 - 245£1.188£5.94
250 - 495£0.982£4.91
500 - 1245£0.922£4.61
1250 +£0.868£4.34

*price indicative

Packaging Options:
RS Stock No.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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