N-Channel MOSFET, 36 A, 40 V, 8-Pin SOIC Vishay SI4154DY-T1-GE3
- RS Stock No.:
- 180-7965
- Mfr. Part No.:
- SI4154DY-T1-GE3
- Brand:
- Vishay
5000 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 10)
£1.137
(exc. VAT)
£1.364
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 90 | £1.137 | £11.37 |
| 100 - 240 | £1.081 | £10.81 |
| 250 - 490 | £0.91 | £9.10 |
| 500 - 990 | £0.74 | £7.40 |
| 1000 + | £0.569 | £5.69 |
| *price indicative | ||
- RS Stock No.:
- 180-7965
- Mfr. Part No.:
- SI4154DY-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• POL
• Synchronous rectifier
• Synchronous rectifier
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• BS EN 61340-5-1:2007
• IEC 61249-2-21
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 36 A |
| Maximum Drain Source Voltage | 40 V |
| Series | TrenchFET |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.0039 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Number of Elements per Chip | 1 |
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