STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7
- RS Stock No.:
- 786-3798
- Mfr. Part No.:
- STP310N10F7
- Brand:
- STMicroelectronics
Save 26% when you buy 500 units
Subtotal (1 pack of 2 units)*
£7.37
(exc. VAT)
£8.844
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.685 | £7.37 |
| 10 - 98 | £3.145 | £6.29 |
| 100 - 498 | £2.77 | £5.54 |
| 500 + | £2.70 | £5.40 |
*price indicative
- RS Stock No.:
- 786-3798
- Mfr. Part No.:
- STP310N10F7
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET H7 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 315 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.4mm | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET H7 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 315 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.4mm | ||
Transistor Material Si | ||
Width 4.6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 15.75mm | ||
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