onsemi Dual N/P-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN NTLJD3119CTBG

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Subtotal (1 pack of 10 units)*

£6.08

(exc. VAT)

£7.30

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90£0.608£6.08
100 - 240£0.524£5.24
250 - 490£0.454£4.54
500 - 990£0.399£3.99
1000 +£0.363£3.63

*price indicative

Packaging Options:
RS Stock No.:
780-0655
Mfr. Part No.:
NTLJD3119CTBG
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

4.1 A, 4.6 A

Maximum Drain Source Voltage

20 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

120 mΩ, 200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

2mm

Typical Gate Charge @ Vgs

3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

0.75mm

Dual N/P-Channel MOSFET, ON Semiconductor


The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.


MOSFET Transistors, ON Semiconductor

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