onsemi PowerTrench Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin SOT-23 FDC6561AN

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Subtotal (1 pack of 10 units)*

£3.31

(exc. VAT)

£3.97

(inc. VAT)

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Per Pack*
10 - 90£0.331£3.31
100 - 240£0.285£2.85
250 - 490£0.247£2.47
500 - 990£0.217£2.17
1000 +£0.198£1.98

*price indicative

Packaging Options:
RS Stock No.:
761-9838
Mfr. Part No.:
FDC6561AN
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

152 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

2.3 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

1.7mm

Height

1mm

Minimum Operating Temperature

-55 °C

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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