onsemi PowerTrench Dual N/P-Channel MOSFET, 1.9 A, 2.7 A, 20 V, 6-Pin SOT-23 FDC6327C
- RS Stock No.:
- 761-3956
- Mfr. Part No.:
- FDC6327C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£5.95
(exc. VAT)
£7.14
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,280 unit(s) ready to ship
- Plus 999,996,710 unit(s) shipping from 17 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.595 | £5.95 |
| 100 - 240 | £0.513 | £5.13 |
| 250 - 490 | £0.445 | £4.45 |
| 500 - 990 | £0.391 | £3.91 |
| 1000 + | £0.356 | £3.56 |
*price indicative
- RS Stock No.:
- 761-3956
- Mfr. Part No.:
- FDC6327C
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1.9 A, 2.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 130 mΩ, 270 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 2.85 nC @ 4.5 V, 3.25 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.7mm | |
| Transistor Material | Si | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.9 A, 2.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 130 mΩ, 270 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 2.85 nC @ 4.5 V, 3.25 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.7mm | ||
Transistor Material Si | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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