onsemi N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB BUZ11-NR4941

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Subtotal (1 pack of 5 units)*

£6.13

(exc. VAT)

£7.355

(inc. VAT)

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Last RS stock
  • Plus 45 unit(s) shipping from 27 October 2025
  • Plus 75 unit(s) shipping from 27 October 2025
  • Final 865 unit(s) shipping from 03 November 2025
Units
Per unit
Per Pack*
5 - 45£1.226£6.13
50 - 95£1.056£5.28
100 - 495£0.916£4.58
500 - 995£0.806£4.03
1000 +£0.732£3.66

*price indicative

Packaging Options:
RS Stock No.:
761-3515
Mfr. Part No.:
BUZ11-NR4941
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

50 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Length

10.67mm

Width

4.83mm

Height

16.51mm

Minimum Operating Temperature

-55 °C

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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