onsemi N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB BUZ11-NR4941
- RS Stock No.:
- 761-3515
- Mfr. Part No.:
- BUZ11-NR4941
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.13
(exc. VAT)
£7.355
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 55 left, ready to ship
- Plus 115 left, ready to ship from another location
- Final 865 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.226 | £6.13 |
50 - 95 | £1.056 | £5.28 |
100 - 495 | £0.916 | £4.58 |
500 - 995 | £0.806 | £4.03 |
1000 + | £0.732 | £3.66 |
*price indicative
- RS Stock No.:
- 761-3515
- Mfr. Part No.:
- BUZ11-NR4941
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 50 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 40 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 75 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 4.83mm | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Maximum Operating Temperature | +150 °C | |
Height | 16.51mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 50 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +150 °C | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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