onsemi BUZ11 Type N-Channel MOSFET, 30 A, 50 V Enhancement, 3-Pin TO-220 BUZ11-NR4941
- RS Stock No.:
- 761-3515
- Mfr. Part No.:
- BUZ11-NR4941
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.33
(exc. VAT)
£7.595
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Plus 100 unit(s) shipping from 29 December 2025
- Plus 365 unit(s) shipping from 29 December 2025
- Final 115 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.266 | £6.33 |
| 50 - 95 | £1.092 | £5.46 |
| 100 - 495 | £0.946 | £4.73 |
| 500 - 995 | £0.832 | £4.16 |
| 1000 + | £0.756 | £3.78 |
*price indicative
- RS Stock No.:
- 761-3515
- Mfr. Part No.:
- BUZ11-NR4941
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BUZ11 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 75W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BUZ11 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 75W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 16.51mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NTHL110N65S3F
- onsemi N-Channel MOSFET 1200 V, 7-Pin D2PAK NTBG080N120SC1
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NVHL110N65S3F
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-220 NTP110N65S3HF
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-220 NTPF110N65S3HF
- onsemi N-Channel MOSFET 650 V, 3-Pin D2PAK NTB110N65S3HF
- onsemi N-Channel MOSFET 30 V, 8-Pin SO-8FL NTMFS4C06NT1G
- onsemi N-Channel MOSFET 30 V, 8-Pin SO-8FL NTMFS4C10NT1G