onsemi PowerTrench N-Channel MOSFET, 4.1 A, 150 V, 8-Pin SOIC FDS86242
- RS Stock No.:
- 759-9692
- Mfr. Part No.:
- FDS86242
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£1.55
(exc. VAT)
£1.86
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,998 unit(s) shipping from 09 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £0.775 | £1.55 |
| 20 - 198 | £0.67 | £1.34 |
| 200 - 998 | £0.58 | £1.16 |
| 1000 + | £0.51 | £1.02 |
*price indicative
- RS Stock No.:
- 759-9692
- Mfr. Part No.:
- FDS86242
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.1 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 126 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.9 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 5mm | |
| Length | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.1 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 126 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.9 nC @ 10 V | ||
Transistor Material Si | ||
Width 5mm | ||
Length 4mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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