onsemi PowerTrench N-Channel MOSFET, 4.1 A, 150 V, 8-Pin SOIC FDS86242
- RS Stock No.:
- 166-2651
- Mfr. Part No.:
- FDS86242
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£615.00
(exc. VAT)
£737.50
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 06 February 2026
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.246 | £615.00 |
*price indicative
- RS Stock No.:
- 166-2651
- Mfr. Part No.:
- FDS86242
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 4.1 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 126 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 5mm | |
Maximum Operating Temperature | +150 °C | |
Length | 4mm | |
Typical Gate Charge @ Vgs | 8.9 nC @ 10 V | |
Transistor Material | Si | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.1 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 126 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Maximum Operating Temperature +150 °C | ||
Length 4mm | ||
Typical Gate Charge @ Vgs 8.9 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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