onsemi PowerTrench N-Channel MOSFET, 12 A, 150 V, 8-Pin PQFN8 FDMS86252L
- RS Stock No.:
- 166-2095
- Mfr. Part No.:
- FDMS86252L
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£1,701.00
(exc. VAT)
£2,040.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.567 | £1,701.00 |
*price indicative
- RS Stock No.:
- 166-2095
- Mfr. Part No.:
- FDMS86252L
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | PQFN8 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.85mm | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.85mm | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
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