onsemi PowerTrench N-Channel MOSFET, 62 A, 200 V, 3-Pin D2PAK FDB2614
- RS Stock No.:
- 759-8967
- Mfr. Part No.:
- FDB2614
- Brand:
- onsemi
Subtotal (1 unit)*
£3.78
(exc. VAT)
£4.54
(inc. VAT)
FREE delivery for orders over £50.00
- 1,740 unit(s) ready to ship
Units | Per unit |
---|---|
1 - 9 | £3.78 |
10 - 99 | £3.26 |
100 - 499 | £2.82 |
500 + | £2.48 |
*price indicative
- RS Stock No.:
- 759-8967
- Mfr. Part No.:
- FDB2614
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 62 A | |
Maximum Drain Source Voltage | 200 V | |
Series | PowerTrench | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 27 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 260 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 76 nC @ 10 V | |
Width | 11.33mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 200 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 27 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 260 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 76 nC @ 10 V | ||
Width 11.33mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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