Vishay IRFL9014 Type P-Channel Power MOSFET, -1.8 A, -60 V Enhancement, 4-Pin SOT-223 IRFL9014TRPBF
- RS Stock No.:
- 710-4654
- Mfr. Part No.:
- IRFL9014TRPBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£7.88
(exc. VAT)
£9.46
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 120 unit(s) shipping from 24 August 2026
- Plus 650 unit(s) shipping from 22 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.788 | £7.88 |
| 50 - 90 | £0.749 | £7.49 |
| 100 - 240 | £0.567 | £5.67 |
| 250 - 490 | £0.512 | £5.12 |
| 500 + | £0.433 | £4.33 |
*price indicative
- RS Stock No.:
- 710-4654
- Mfr. Part No.:
- IRFL9014TRPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -1.8A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | IRFL9014 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -5.5V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Standards/Approvals | RoHS | |
| Height | 1.45mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -1.8A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series IRFL9014 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -5.5V | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Length 6.7mm | ||
Standards/Approvals RoHS | ||
Height 1.45mm | ||
Automotive Standard No | ||
Vishay IRFL9014 Series Power MOSFET, 60V Maximum Drain Source Voltage, 3.1W Maximum Power Dissipation - IRFL9014TRPBF
This power MOSFET is a P-channel enhancement device designed for surface-mount switching and power-management tasks. It operates across a wide ambient range and is intended for applications requiring controlled gate drive and moderate power handling in compact packages.
Features and Benefits:
• Vds rating supports switching up to -60V for higher voltages
• Continuous drain current of -1.8A for steady load handling
• Rds(on) at 500mΩ reduces conduction losses in switching paths
• Typical gate charge 12nC enables faster gate transitions
• Vf of -5.5V assists in predictable forward conduction behaviour
• Power dissipation 3.1W allows sustained thermal loading
• Continuous drain current of -1.8A for steady load handling
• Rds(on) at 500mΩ reduces conduction losses in switching paths
• Typical gate charge 12nC enables faster gate transitions
• Vf of -5.5V assists in predictable forward conduction behaviour
• Power dissipation 3.1W allows sustained thermal loading
Applications
• Suitable for surface-mount low-side and high-side switching
• Ideal for compact power-rail polarity control circuits
• Used for load switching in battery-powered equipment
• Can be used for level-shift and gate-drive circuitry
• Suitable for thermally constrained board designs requiring compact parts
• Ideal for compact power-rail polarity control circuits
• Used for load switching in battery-powered equipment
• Can be used for level-shift and gate-drive circuitry
• Suitable for thermally constrained board designs requiring compact parts
What thermal extremes can this component tolerate in operation?
It is specified for use from -55°C up to 150°C enabling operation in harsh thermal environments.
Which package and mounting style does the device use?
The device comes in a SOT-223 package intended for surface mounting to facilitate compact PCB layouts.
What gate voltage limits must be observed when designing a driver?
The maximum gate-to-source rating is 20V, so gate-drive circuitry must not exceed this threshold.
How many electrical connections are provided for PCB routing?
The component provides four pins to support gate, drain and source routing considerations.
Related links
- Vishay IRFL9014 Type P-Channel Power MOSFET -60 V Enhancement, 4-Pin SOT-223 IRFL9014TRPBF
- DiodesZetex Full Bridge 4 Type N 1.8 A 8-Pin
- DiodesZetex Full Bridge 4 Type N 1.8 A 8-Pin ZXMHC6A07T8TA
- DiodesZetex Full Bridge 4 Type N 1.8 A 8-Pin SOIC
- DiodesZetex Full Bridge 4 Type N 1.8 A 8-Pin SOIC ZXMHC6A07N8TC
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Vishay IRFU9310 Type P-Channel Power MOSFET -400 V Enhancement, 3-Pin IPAK IRFU9310PBF