Vishay P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC SI4435DDY-T1-GE3

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Subtotal (1 pack of 10 units)*

£5.28

(exc. VAT)

£6.34

(inc. VAT)

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  • 1,250 unit(s) ready to ship
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Per unit
Per Pack*
10 - 90£0.528£5.28
100 - 490£0.502£5.02
500 - 990£0.422£4.22
1000 - 2490£0.398£3.98
2500 +£0.37£3.70

*price indicative

Packaging Options:
RS Stock No.:
710-3339
Mfr. Part No.:
SI4435DDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8.1 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

4mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V, 32 nC @ 10 V

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor



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