Vishay N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF
- RS Stock No.:
- 708-4872
- Mfr. Part No.:
- IRLI640GPBF
- Brand:
- Vishay
Save 29% when you buy 250 units
Subtotal (1 pack of 5 units)*
£11.35
(exc. VAT)
£13.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 375 unit(s) ready to ship
- Plus 999,999,620 unit(s) shipping from 06 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £2.27 | £11.35 |
25 - 45 | £1.93 | £9.65 |
50 - 120 | £1.816 | £9.08 |
125 - 245 | £1.702 | £8.51 |
250 + | £1.59 | £7.95 |
*price indicative
- RS Stock No.:
- 708-4872
- Mfr. Part No.:
- IRLI640GPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 9.9 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 180 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 66 nC @ 10 V | |
Height | 9.8mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.9 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 66 nC @ 10 V | ||
Height 9.8mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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