N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STMicroelectronics STB4NK60ZT4

RS Stock No.:: 687-5190
Mfr. Part No.:: STB4NK60ZT4
Brand:: STMicroelectronics

N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STMicroelectronics STB4NK60ZT4

25 In stock - FREE next working day delivery available

Price Each (In a Pack of 5)

£1.43

(exc. VAT)

£1.72

(inc. VAT)

Units	Per unit	Per Pack*
5 - 5	£1.43	£7.15
10 - 20	£1.28	£6.40
25 - 95	£1.208	£6.04
100 - 495	£0.904	£4.52
500 +	£0.768	£3.84

*price indicative

RS Stock No.:: 687-5190
Mfr. Part No.:: STB4NK60ZT4
Brand:: STMicroelectronics

MOSFET N-ch 4A 600V SuperMESH D2PAK
STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1, N-Channel 600V, 1.7 Ohm, 4A Zener-Protected SuperMESH Power MOSFETs
ESD Control Selection Guide V1

RS Stock No.:: 687-5190
Mfr. Part No.:: STB4NK60ZT4
Brand:: STMicroelectronics

MOSFET N-ch 4A 600V SuperMESH D2PAK
STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1, N-Channel 600V, 1.7 Ohm, 4A Zener-Protected SuperMESH Power MOSFETs
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	600 V
Series	MDmesh, SuperMESH
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	70 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	18.8 nC @ 10 V
Length	10.4mm
Transistor Material	Si
Width	9.35mm
Minimum Operating Temperature	-55 °C
Height	4.6mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	600 V
Series	MDmesh, SuperMESH
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	70 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	18.8 nC @ 10 V
Length	10.4mm
Transistor Material	Si
Width	9.35mm
Minimum Operating Temperature	-55 °C
Height	4.6mm

N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STMicroelectronics STB4NK60ZT4

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

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