onsemi P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK FQD11P06TM

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Subtotal (1 pack of 5 units)*

£5.51

(exc. VAT)

£6.61

(inc. VAT)

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  • 190 unit(s) ready to ship
  • Plus 1,495 unit(s) shipping from 30 October 2025
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5 - 45£1.102£5.51
50 - 95£0.95£4.75
100 - 495£0.824£4.12
500 - 995£0.724£3.62
1000 +£0.658£3.29

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Packaging Options:
RS Stock No.:
671-0949
Mfr. Part No.:
FQD11P06TM
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

6.1mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Length

6.6mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.3mm

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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