onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

RS Stock No.:: 671-0949
Mfr. Part No.:: FQD11P06TM
Brand:: onsemi

onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

Bulk discount available

Subtotal (1 pack of 5 units)*

£6.18

(exc. VAT)

£7.415

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 185 unit(s) shipping from 29 December 2025
Plus 1,405 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£1.236	£6.18
50 - 95	£1.066	£5.33
100 - 495	£0.924	£4.62
500 - 995	£0.812	£4.06
1000 +	£0.738	£3.69

*price indicative

RS Stock No.:: 671-0949
Mfr. Part No.:: FQD11P06TM
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	QFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	185mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Forward Voltage Vf	-4V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Length	6.6mm
	Height	2.3mm
	Standards/Approvals	No
	Width	6.1 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series QFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 185mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Forward Voltage Vf -4V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Length 6.6mm
	Height 2.3mm
	Standards/Approvals No
	Width 6.1 mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.