onsemi QFET P-Channel MOSFET, 1.33 A, 500 V, 3-Pin DPAK FQD3P50TM
- RS Stock No.:
- 124-1413
- Mfr. Part No.:
- FQD3P50TM
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£1,220.00
(exc. VAT)
£1,465.00
(inc. VAT)
FREE delivery for orders over £50.00
- 5,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.488 | £1,220.00 |
*price indicative
- RS Stock No.:
- 124-1413
- Mfr. Part No.:
- FQD3P50TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.33 A | |
Maximum Drain Source Voltage | 500 V | |
Series | QFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.9 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 50 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Width | 6.22mm | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.33 A | ||
Maximum Drain Source Voltage 500 V | ||
Series QFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.9 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET P-Channel MOSFET 500 V, 3-Pin DPAK FQD3P50TM
- onsemi QFET P-Channel MOSFET 500 V, 3-Pin TO-220AB FQP3P50
- onsemi QFET P-Channel MOSFET 100 V, 3-Pin TO-220 FQP8P10
- onsemi QFET P-Channel MOSFET 60 V, 3-Pin TO-220F FQPF27P06
- onsemi QFET P-Channel MOSFET 60 V, 3-Pin TO-220F FQPF47P06
- onsemi QFET P-Channel MOSFET 200 V, 3-Pin IPAK FQU5P20TU
- onsemi QFET P-Channel MOSFET 60 V, 3-Pin TO-220AB FQP27P06
- onsemi QFET P-Channel MOSFET 200 V, 3-Pin TO-220F FQPF7P20