P-Channel MOSFET, 1.33 A, 500 V, 3-Pin DPAK onsemi FQD3P50TM

RS Stock No.:: 124-1413
Mfr. Part No.:: FQD3P50TM
Brand:: onsemi

P-Channel MOSFET, 1.33 A, 500 V, 3-Pin DPAK onsemi FQD3P50TM

2300 In stock - FREE next working day delivery available

Price Each (On a Reel of 2500)

£0.459

(exc. VAT)

£0.551

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	£0.459	£1,147.50

*price indicative

RS Stock No.:: 124-1413
Mfr. Part No.:: FQD3P50TM
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.33 A
Maximum Drain Source Voltage	500 V
Series	QFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.9 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	50 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	6.22mm
Typical Gate Charge @ Vgs	18 nC @ 10 V
Length	6.73mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	2.39mm
Minimum Operating Temperature	-55 °C