onsemi FDN357N Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23 FDN357N

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

£1.57

(exc. VAT)

£1.885

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 20 unit(s) ready to ship
  • Plus 660 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45£0.314£1.57
50 - 95£0.27£1.35
100 - 495£0.234£1.17
500 - 995£0.206£1.03
1000 +£0.188£0.94

*price indicative

Packaging Options:
RS Stock No.:
671-0441
Mfr. Part No.:
FDN357N
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

30V

Series

FDN357N

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Operating Temperature

150°C

Length

2.92mm

Height

0.94mm

Standards/Approvals

No

Width

1.4 mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links