Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	1.9 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	600 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	500 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	2.92mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	4.2 nC @ 5 V
	Width	1.4mm
	Maximum Operating Temperature	+150 °C
	Height	0.94mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 1.9 A
	Maximum Drain Source Voltage 30 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 600 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 500 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 2.92mm
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 4.2 nC @ 5 V
	Width 1.4mm
	Maximum Operating Temperature +150 °C
	Height 0.94mm
	Minimum Operating Temperature -55 °C

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Units	Per unit	Per Pack*
5 - 45	£0.314	£1.57
50 - 95	£0.27	£1.35
100 - 495	£0.234	£1.17
500 - 995	£0.206	£1.03
1000 +	£0.188	£0.94

onsemi N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 FDN357N

FREE delivery for orders over £50.00

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

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