Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215
- RS Stock No.:
- 124-2287
- Mfr. Part No.:
- BSH108,215
- Brand:
- Nexperia
Subtotal (1 reel of 3000 units)*
£225.00
(exc. VAT)
£270.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 63,000 unit(s) ready to ship
- Plus 60,000 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.075 | £225.00 |
*price indicative
- RS Stock No.:
- 124-2287
- Mfr. Part No.:
- BSH108,215
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 120 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 830 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -65 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 120 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 830 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 6.4 nC @ 10 V | ||
Width 1.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -65 °C | ||
Height 1mm | ||
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