Nexperia N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 PMV213SN,215
- RS Stock No.:
- 725-8326
- Mfr. Part No.:
- PMV213SN,215
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 20 units)*
£7.34
(exc. VAT)
£8.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 320 unit(s) ready to ship
- Plus 440 unit(s) shipping from 20 November 2025
- Plus 3,000 unit(s) shipping from 19 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £0.367 | £7.34 |
| 40 - 80 | £0.33 | £6.60 |
| 100 + | £0.294 | £5.88 |
*price indicative
- RS Stock No.:
- 725-8326
- Mfr. Part No.:
- PMV213SN,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 7 nC @ 10 V | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors