onsemi PowerTrench P-Channel MOSFET, 1.6 A, 20 V, 3-Pin SOT-23 FDN338P
- RS Stock No.:
- 671-0438
- Mfr. Part No.:
- FDN338P
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£2.89
(exc. VAT)
£3.47
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 90 left, shipping from 08 September 2025
- Plus 26,860 left, shipping from 15 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.289 | £2.89 |
| 50 - 90 | £0.157 | £1.57 |
| 100 - 240 | £0.121 | £1.21 |
| 250 - 490 | £0.101 | £1.01 |
| 500 + | £0.10 | £1.00 |
*price indicative
- RS Stock No.:
- 671-0438
- Mfr. Part No.:
- FDN338P
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 115 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 4.4 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.92mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.94mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 115 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 4.4 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.92mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.94mm | ||
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