Infineon HEXFET N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220AB IRFZ44VPBF
- RS Stock No.:
- 543-0939
- Mfr. Part No.:
- IRFZ44VPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£1.10
(exc. VAT)
£1.32
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 1 left, ready to ship from another location
- Final 2,532 unit(s) shipping from 07 November 2025
Units | Per unit |
|---|---|
| 1 - 9 | £1.10 |
| 10 - 49 | £1.04 |
| 50 - 99 | £0.97 |
| 100 - 249 | £0.89 |
| 250 + | £0.82 |
*price indicative
- RS Stock No.:
- 543-0939
- Mfr. Part No.:
- IRFZ44VPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 17 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 115 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 115 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 67 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRLB3036PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3006PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3806PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1018EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EZPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFZ44EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3206PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EPBF