Infineon HEXFET Type N-Channel MOSFET, 55 A, 60 V Enhancement, 3-Pin TO-220 IRFZ44VPBF
- RS Stock No.:
- 543-0939
- Mfr. Part No.:
- IRFZ44VPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£1.10
(exc. VAT)
£1.32
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Plus 5 unit(s) shipping from 29 December 2025
- Final 2,496 unit(s) shipping from 05 January 2026
Units | Per unit |
|---|---|
| 1 - 9 | £1.10 |
| 10 - 49 | £1.04 |
| 50 - 99 | £0.97 |
| 100 - 249 | £0.89 |
| 250 + | £0.82 |
*price indicative
- RS Stock No.:
- 543-0939
- Mfr. Part No.:
- IRFZ44VPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 115W | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 115W | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1018EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3206PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3806PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3306PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFZ44EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EZPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRLB3036PBF