Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1

RS Stock No.:: 354-5708
Distrelec Article No.:: 302-83-876
Mfr. Part No.:: BSP135H6327XTSA1
Brand:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1

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RS Stock No.:: 354-5708
Distrelec Article No.:: 302-83-876
Mfr. Part No.:: BSP135H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	120 mA
	Maximum Drain Source Voltage	600 V
	Package Type	SOT-223
	Series	SIPMOS®
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	60 Ω
	Channel Mode	Depletion
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	1.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Length	6.5mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	3.5mm
	Typical Gate Charge @ Vgs	3.7 nC @ 5 V
	Height	1.6mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 120 mA
	Maximum Drain Source Voltage 600 V
	Package Type SOT-223
	Series SIPMOS®
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 60 Ω
	Channel Mode Depletion
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 1.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Length 6.5mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 3.5mm
	Typical Gate Charge @ Vgs 3.7 nC @ 5 V
	Height 1.6mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Automotive Standard AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 120 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP135H6327XTSA1

This MOSFET is intended for efficient switching applications, known for its high voltage handling capabilities and low power consumption profile. As a single N-channel depletion mode MOSFET, it is well-suited for various electronic applications that require compact surface mount solutions. With a maximum drain-source voltage of 600V, it is a suitable choice for automotive and power management sectors prioritising efficiency and reliability.

Features & Benefits

• Utilises SIPMOS® technology for enhanced efficiency
• Supports high voltage capacities up to 600V for operational reliability
• Low power consumption rated at 120mA improves energy efficiency
• Designed for surface mount applications, providing space-saving benefits
• ESD protection rated for 1A to safeguard sensitive circuits
• Automotive qualified under AEC-Q101, conforming to industry standards

Applications

• Suitable for power management solutions in electronic devices
• Utilised in low voltage with high voltage capabilities
• Integrated in packaging for efficient thermal management
• Used in control circuits that require robust components

What are the implications of the thermal resistance values for performance?

The thermal resistance indicates the device's heat dissipation effectiveness, ensuring it operates within safe limits during continuous use. Lower thermal resistance values can enhance performance by improving heat management, particularly in high-current applications.

Can this MOSFET handle high-frequency switching applications?

Yes, it features low gate charge characteristics, enabling efficient operation in high-frequency environments, making it suitable for a variety of modern electronic applications.

What should be considered regarding installation and compatibility?

It is important to confirm that the mounting type aligns with the circuit board design to optimise performance and avoid potential thermal management or connectivity issues.

How does the maximum power dissipation impact its application?

With a maximum power dissipation of 1.8W, it is essential to ensure that usage does not exceed this limit to prevent overheating and potential failure. Appropriate thermal management is crucial in design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.