Vishay Dual Silicon N-Channel MOSFET, 36 A, 80 V, 12-Pin 3 x 3FS SIZF4800LDT-T1-GE3
- RS Stock No.:
- 280-0005
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,713.00
(exc. VAT)
£2,055.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 6,000 unit(s) shipping from 13 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.571 | £1,713.00 |
*price indicative
- RS Stock No.:
- 280-0005
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | 3 x 3FS | |
| Mounting Type | Surface Mount | |
| Pin Count | 12 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type 3 x 3FS | ||
Mounting Type Surface Mount | ||
Pin Count 12 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Vishay MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Symmetric dual n-channel
Fully lead (Pb)-free device
100 percent Rg and UIS tested
Symmetric dual n-channel
Fully lead (Pb)-free device
Related links
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