Vishay SIZF4800LDT 2 Type N-Channel MOSFET, 36 A, 80 V Enhancement, 12-Pin 3 x 3FS SIZF4800LDT-T1-GE3
- RS Stock No.:
- 280-0006
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 4 units)*
£7.00
(exc. VAT)
£8.40
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 5,636 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | £1.75 | £7.00 |
| 60 - 96 | £1.313 | £5.25 |
| 100 - 236 | £1.173 | £4.69 |
| 240 - 996 | £1.145 | £4.58 |
| 1000 + | £1.125 | £4.50 |
*price indicative
- RS Stock No.:
- 280-0006
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SIZF4800LDT | |
| Package Type | 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101, RoHS, 100 percent Rg and UIS tested | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SIZF4800LDT | ||
Package Type 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101, RoHS, 100 percent Rg and UIS tested | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Symmetric dual n-channel
Fully lead (Pb)-free device
Related links
- Vishay SIZF4800LDT 2 Type N-Channel MOSFET 80 V Enhancement, 12-Pin 3 x 3FS
- Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS
- Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-GE3
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAIR 3 x 3FDC
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual SiZ270DT 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S