Vishay Dual N-Channel MOSFET, 100 A, 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- RS Stock No.:
- 252-0295
- Mfr. Part No.:
- SIZF5302DT-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.58
(exc. VAT)
£11.495
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,035 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.916 | £9.58 |
50 - 120 | £1.798 | £8.99 |
125 - 245 | £1.626 | £8.13 |
250 - 495 | £1.532 | £7.66 |
500 + | £1.436 | £7.18 |
*price indicative
- RS Stock No.:
- 252-0295
- Mfr. Part No.:
- SIZF5302DT-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PowerPAIR 3 x 3FS | |
Mounting Type | Surface Mount | |
Pin Count | 12 | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAIR 3 x 3FS | ||
Mounting Type Surface Mount | ||
Pin Count 12 | ||
Number of Elements per Chip 2 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
Related links
- Vishay Dual N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- Vishay Dual N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 80 V, 12-Pin 3 x 3FS SIZF4800LDT-T1-GE3
- Vishay SiZ340ADT Dual N-Channel MOSFET 30 V, 8-Pin PowerPAIR 3 x 3 SiZ340ADT-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 70 V, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 70 V, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3
- Vishay SiZ270DT Dual N-Channel MOSFET 100 V, 8-Pin PowerPAIR 3 x 3S SIZ270DT-T1-GE3
- Vishay TrenchFET® Gen IV Dual N-Channel MOSFET 48 A 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3