Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

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Subtotal (1 pack of 5 units)*

£6.85

(exc. VAT)

£8.20

(inc. VAT)

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Per Pack*
5 - 45£1.37£6.85
50 - 95£1.182£5.91
100 - 245£1.052£5.26
250 - 995£1.03£5.15
1000 +£1.014£5.07

*price indicative

Packaging Options:
RS Stock No.:
279-9956
Mfr. Part No.:
SIR5808DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66.8A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00735Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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