Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- RS Stock No.:
- 279-9927
- Mfr. Part No.:
- SIHP155N60EF-GE3
- Brand:
- Vishay
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
£7.08
(exc. VAT)
£8.50
(inc. VAT)
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In Stock
- 996 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.54 | £7.08 |
| 10 - 28 | £3.47 | £6.94 |
| 30 - 98 | £3.39 | £6.78 |
| 100 + | £3.33 | £6.66 |
*price indicative
- RS Stock No.:
- 279-9927
- Mfr. Part No.:
- SIHP155N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHP | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.157Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHP | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.157Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
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