Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

£8.912

(exc. VAT)

£10.696

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4,980 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
4 - 56£2.228£8.91
60 - 96£2.09£8.36
100 - 236£1.863£7.45
240 - 996£1.828£7.31
1000 +£1.793£7.17

*price indicative

Packaging Options:
RS Stock No.:
279-9895
Mfr. Part No.:
SI4190BDY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Series

SI

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.093Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

8.4W

Typical Gate Charge Qg @ Vgs

95nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links