Vishay Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 SI2392BDS-T1-GE3
- RS Stock No.:
- 279-9893
- Mfr. Part No.:
- SI2392BDS-T1-GE3
- Brand:
- Vishay
Save 25% when you buy 1000 units
Subtotal (1 pack of 20 units)*
£9.08
(exc. VAT)
£10.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,960 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
20 - 20 | £0.454 | £9.08 |
40 - 80 | £0.397 | £7.94 |
100 - 280 | £0.355 | £7.10 |
300 - 980 | £0.347 | £6.94 |
1000 + | £0.34 | £6.80 |
*price indicative
- RS Stock No.:
- 279-9893
- Mfr. Part No.:
- SI2392BDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.8 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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