Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO-8 SiRA84BDP-T1-GE3

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Subtotal (1 reel of 3000 units)*

£387.00

(exc. VAT)

£465.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000£0.129£387.00
6000 +£0.122£366.00

*price indicative

RS Stock No.:
188-4883
Mfr. Part No.:
SiRA84BDP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Length

5.99mm

Width

5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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