Infineon OptiMOS 3 Type N-Channel MOSFET, 15 A, 250 V Enhancement, 3-Pin PG-TO-220
- RS Stock No.:
- 273-7457
- Mfr. Part No.:
- IPA600N25NM3SXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.22
(exc. VAT)
£5.06
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 496 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £2.11 | £4.22 |
| 10 - 18 | £1.925 | £3.85 |
| 20 - 98 | £1.885 | £3.77 |
| 100 - 248 | £1.755 | £3.51 |
| 250 + | £1.62 | £3.24 |
*price indicative
- RS Stock No.:
- 273-7457
- Mfr. Part No.:
- IPA600N25NM3SXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | PG-TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type PG-TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is ideal for high frequency switching and synchronous rectification. This MOSFET is 100 percent avalanche tested and qualified according to JEDEC standard. It is a N channel MOSFET and halogen free according to IEC61249 2 21.
Pb free lead plating
RoHS compliant
Excellent gate charge
Very low on resistance
Related links
- Infineon N-Channel MOSFET Transistor 3-Pin PG-TO 220 IPA600N25NM3SXKSA1
- STMicroelectronics N-Channel MOSFET Transistor 3-Pin TO-220 STP26N60DM6
- Infineon IGLT65 GaN N-Channel MOSFET Transistor 650 V, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1
- STMicroelectronics N-Channel MOSFET Transistor 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6
- Infineon N-Channel MOSFET Transistor 3-Pin PG-TO220 IPP086N10N3GXKSA1
- Infineon N-Channel MOSFET Transistor 3-Pin PG-TO220 IPP034NE7N3GXKSA1
- Infineon N-Channel MOSFET Transistor 3-Pin PG-TO220 IPP052NE7N3GXKSA1
- Infineon N-Channel MOSFET Transistor 3-Pin PG-SC-59 BSR202NL6327HTSA1