MPN

Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223

RS Stock No.:: 273-3016
Mfr. Part No.:: IPN60R1K5PFD7SATMA1
Brand:: Infineon

Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223

Bulk discount available

Subtotal (1 pack of 10 units)*

£4.52

(exc. VAT)

£5.42

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,990 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	£0.452	£4.52
50 - 90	£0.382	£3.82
100 - 240	£0.356	£3.56
250 - 990	£0.348	£3.48
1000 +	£0.342	£3.42

*price indicative

RS Stock No.:: 273-3016
Mfr. Part No.:: IPN60R1K5PFD7SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	650V
	Series	IPN
	Package Type	PG-SOT223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	6W
	Typical Gate Charge Qg @ Vgs	4.6nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC Standard
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 650V
	Series IPN
	Package Type PG-SOT223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 6W
	Typical Gate Charge Qg @ Vgs 4.6nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC Standard
	Automotive Standard No