Infineon IPN N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223 IPN60R1K5PFD7SATMA1

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Subtotal (1 pack of 10 units)*

£5.19

(exc. VAT)

£6.23

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40£0.519£5.19
50 - 90£0.437£4.37
100 - 240£0.408£4.08
250 - 990£0.398£3.98
1000 +£0.392£3.92

*price indicative

RS Stock No.:
273-3016
Mfr. Part No.:
IPN60R1K5PFD7SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-SOT223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.6nC

Maximum Power Dissipation Pd

6W

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.

BOM cost reduction and easy manufacturing

Robustness and reliability

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