Infineon OptiMOSa5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin PG-TO262-3
- RS Stock No.:
- 273-3014
- Mfr. Part No.:
- IPI076N15N5AKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£4.34
(exc. VAT)
£5.21
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 459 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £4.34 |
| 10 - 24 | £3.96 |
| 25 - 49 | £3.62 |
| 50 - 99 | £3.33 |
| 100 + | £3.11 |
*price indicative
- RS Stock No.:
- 273-3014
- Mfr. Part No.:
- IPI076N15N5AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TO262-3 | |
| Series | OptiMOSa5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDECforIndustrialApplications, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TO262-3 | ||
Series OptiMOSa5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDECforIndustrialApplications, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFETs are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications.
Higher power density designs
More rugged products
System cost reduction
Related links
- Infineon N-Channel MOSFET 150 V, 3-Pin TO-262 IPI076N15N5AKSA1
- Infineon MOSFET IPDD60R050G7XTMA1
- Infineon MOSFET IPT014N08NM5ATMA1
- Infineon MOSFET IPB65R660CFDAATMA1
- Infineon MOSFET IPD25DP06NMATMA1
- Infineon MOSFET ISC012N04NM6ATMA1
- Infineon MOSFET IGO60R070D1AUMA2
- Infineon MOSFET Transistor, 3.7 A PG-TO 252 IPD60R2K1CEAUMA1