Vishay SQJQ936E 4 Dual N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ936E-T1_GE3
- RS Stock No.:
- 268-8367
- Mfr. Part No.:
- SQJQ936E-T1_GE3
- Brand:
- Vishay
Subtotal (1 reel of 2000 units)*
£2,156.00
(exc. VAT)
£2,588.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £1.078 | £2,156.00 |
*price indicative
- RS Stock No.:
- 268-8367
- Mfr. Part No.:
- SQJQ936E-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ936E | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Forward Voltage Vf | 0V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101, RoHS, 100 percent Rg and UIS tested | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ936E | ||
Package Type PowerPAK (8x8L) | ||
Mount Type PCB | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Forward Voltage Vf 0V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101, RoHS, 100 percent Rg and UIS tested | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay automotive dual N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
Related links
- Vishay Quad Silicon Dual N-Channel MOSFET 40 V, 4-Pin PowerPAK 8 x 8L SQJQ936E-T1_GE3
- Vishay Quad Silicon Dual N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3
- Vishay Quad Silicon Dual N-Channel MOSFET 60 V, 8-Pin SO-8 SI9634DY-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 4-Pin PowerPAK 8 x 8L SIJH5700E-T1-GE3
- Vishay N-Channel MOSFET 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3
- Vishay N-Channel 40 V N-Channel MOSFET 40 V, 4-Pin PowerPAK 8 x 8L SQJ138ELP-T1_GE3
- Vishay N-Channel 30 V N-Channel MOSFET 30 V, 4-Pin PowerPAK 8 x 8L SQJ128ELP-T1_GE3
- Vishay N-Channel MOSFET 100 V, 4-Pin PowerPAK 8 x 8L SQJQ112E-T1_GE3