Vishay SIHA N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- RS Stock No.:
- 268-8288
- Mfr. Part No.:
- SIHA150N60E-GE3
- Brand:
- Vishay
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£7.23
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- Plus 998 unit(s) shipping from 05 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.615 | £7.23 |
| 10 - 18 | £3.265 | £6.53 |
| 20 - 98 | £3.20 | £6.40 |
| 100 - 498 | £2.675 | £5.35 |
| 500 + | £2.27 | £4.54 |
*price indicative
- RS Stock No.:
- 268-8288
- Mfr. Part No.:
- SIHA150N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHA | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHA | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHA Series MOSFET, 650V Drain Source Voltage, 9A Continuous Drain Current - SIHA150N60E-GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in surface-mount applications. It operates across a broad temperature range and is intended for circuits requiring substantial voltage headroom and moderate continuous current. The device is supplied in a PowerPAK SO-8DC package suitable for compact board layouts.
Features and Benefits:
• 650V drain-to-source rating enables high-voltage switching
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages
What mounting style does it require for PCB assembly?
It is a surface-mount device supplied in a PowerPAK SO-8DC package, designed for reflow soldering onto PCB land patterns compatible with SO-8DC footprints.
How does it behave in extended temperature environments?
The transistor is rated to operate from -55°C up to 150°C, permitting use in systems exposed to low ambient conditions and elevated internal heating.
What gate-drive constraints should be observed?
The gate-to-source voltage must not exceed ±30V, so gate drivers should be limited within those bounds to prevent gate-oxide stress.
What standard restricts hazardous substances in this component?
The device conforms to RoHS requirements, indicating restrictions on certain hazardous materials during manufacture.
Related links
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