Microchip N-Channel MOSFET, 400 V DPAK TN2640K4-G

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Subtotal (1 reel of 2000 units)*

£2,704.00

(exc. VAT)

£3,244.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +£1.352£2,704.00

*price indicative

RS Stock No.:
264-8922
Mfr. Part No.:
TN2640K4-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Drain Source Voltage

400 V

Package Type

DPAK

Mounting Type

Through Hole

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

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