Microchip N-Channel MOSFET, 300 V SOT-23 TN2130K1-G

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

£7.575

(exc. VAT)

£9.10

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,975 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25£0.303£7.58
50 - 75£0.295£7.38
100 - 225£0.288£7.20
250 - 975£0.28£7.00
1000 +£0.273£6.83

*price indicative

Packaging Options:
RS Stock No.:
264-8917
Mfr. Part No.:
TN2130K1-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

N

Maximum Drain Source Voltage

300 V

Package Type

SOT-23

Mounting Type

Through Hole

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Related links