Microchip N-Channel MOSFET, 300 V SOT-23 TN2130K1-G
- RS Stock No.:
- 264-8916
- Mfr. Part No.:
- TN2130K1-G
- Brand:
- Microchip
Subtotal (1 reel of 3000 units)*
£657.00
(exc. VAT)
£789.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 21 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.219 | £657.00 |
*price indicative
- RS Stock No.:
- 264-8916
- Mfr. Part No.:
- TN2130K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Drain Source Voltage | 300 V | |
Package Type | SOT-23 | |
Mounting Type | Through Hole | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Drain Source Voltage 300 V | ||
Package Type SOT-23 | ||
Mounting Type Through Hole | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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