Infineon N-Channel MOSFET Transistor, 180 A PG-TO263-7-3 IPB180N06S4H1ATMA2

View all MOSFETs

Subtotal (1 reel of 1000 units)*

£1,184.00

(exc. VAT)

£1,421.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +£1.184£1,184.00

*price indicative

RS Stock No.:
260-5119
Mfr. Part No.:
IPB180N06S4H1ATMA2
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Package Type

PG-TO263-7-3

The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.

N channel enhancement mode
MSL1 up to 260°C peak reflow
100% Avalanche tested

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links